Analysis and Optimization of a Double Avalanche Region IMPATT diode
نویسندگان
چکیده
The analysis and optimization of the npvnp avalanche diode structure that includes two avalanche regions have been realized on basis of the nonlinear model and special optimization procedure. The admittance and energy characteristics of the DAR diode were analyzed in very wide frequency band from 30 up to 360 GHz. Output power level was optimized for the second frequency band near the 220 GHz.
منابع مشابه
Analysis and Optimization of a DAR IMPATT Diode for 330 GHz
The analysis and optimization of the npvnp avalanche diode have been realized on basis of the nonlinear model and special optimization procedure. This type of the diode that was named as Double Avalanche Region (DAR) IMPATT diode includes two avalanche regions inside the diode. The phase delay which was produced by means of the two avalanche regions and the drift region v is sufficient to obtai...
متن کاملAnalysis of a Double Avalanche Region IMPATT Diode for High Frequency Part of Millimetric Region
The analysis and optimization of the npvnp avalanche diode structure that includes two avalanche regions have been realized on basis of the nonlinear model and special optimization procedure. The admittance characteristics of the DAR diode were analyzed in very wide frequency band from 30 up to 360 GHz and had been optimized for the third frequency band near the 300 GHz.
متن کاملComparative Analysis of High Frequency Characteristics of DDR and DAR IMPATT Diodes
IMPATT (IMPact Avalanche ionization and Transit Time) diodes are principal active elements for use in millimetric generators. Semiconductor structures suitable for fabrication of continuos-mode IMPATT diodes have been well known for a long time (Scharfetter & Gummel, 1969; Howes & Morgan, 1976). They have been utilized successfully in many applications in microwave engineering. The possibilitie...
متن کاملGallium Phosphide IMPATT Sources for Millimeter-Wave Applications
The potentiality of millimter-wave (mm-wave) double-drift region (DDR) impact avalanche transit time (IMPATT) diodes based on a wide bandgap (WBG) semiconductor material, Gallium Phosphide (GaP) has been explored in this paper. A non-sinusoidal voltage excited (NSVE) large-signal simulation method has been used to study the DC and high frequency characteristics of DDR GaP IMPATTs dsigned to ope...
متن کاملA Theory of Multiple Modes in Avalanche Diodes
This report develops a multidimensional, dynamic analysis of solid state avalanche diodes. Well-established electromagnetic concepts are applied to a widely used model of the diode and reveal a discrete spectrum of new small-signal modes. The approach used enlarges the conventional perspective and has permitted the discovery that at least one of these new modes appears to possess a high power c...
متن کامل